NTJD4401NT4G product image

NTJD4401NT4G

Transistors
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Manufacturer
ON Semiconductor
Description
 
Features of theNTJD4401NT4Gare: Small Footprint (2 x 2 mm). Low Gate Charge N−Channel Device. ESD Protected Gate. Same Package as SC−70 (6 Leads). AEC−Q101 Qualified and PPAP Capable − NVJD4401N. These Devices are Pb−Free and are RoHS Compliant
 
NTJD4401NT4G Applications
 
• Load Power Switching
• Li−Ion Battery Supplied Devices
• Cell Phones, Media Players, Digital Cameras, PDAs
• DC−DC Conversion
Parametrics
Drain-Source Breakdown Voltage:20 V
Gate-Source Breakdown Voltage:+/- 12 V
Continuous Drain Current:- 0.775 A
Drain-Source On Resistance:510 mOhms
Maximum Operating Temperature:+ 150 C
Minimum Operating Temperature:- 55 C
Power Dissipation:0.27 W
Rise Time:227 ns
Fall Time:227 ns
Typical Turn-Off Delay Time:786 ns
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