SPP20N60C3 Datasheet

Cool MOSTM Power Transistor


. New revolutionary high voltage technology. Worldwide best RDS(on) in T0 220. Ultra low gate charge. Periodic avalanche rated. Extreme dvldt rated. High peak current capability. Improved transconductance. Improved transconductance. PG-T0-220-3-31: Fully isolated package (2500 VAC; 1 minute). Pb-free lead plating; RoHS compliant. Qualified according to JEDECo) for to rget applications


[{"Name":"Drain-Source Breakdown Voltage","Value":"600 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V"},{"Name":"Continuous Drain Current","Value":"20.7 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.19 Ohms"},{"Name":"Configuration","Value":"Single"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Packaging","Value":"Tube"},{"Name":"Fall Time","Value":"4.5 ns"},{"Name":"Minimum Operating Temperature","Value":"- 55 C"},{"Name":"Power Dissipation","Value":"208 W"},{"Name":"Rise Time","Value":"5 ns"}]

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