STB12NM50T4 product image

STB12NM50T4

MOSFET
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Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Description

 

The STB12NM50T4  MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

 

STB12NM50T4 Features

 

•  High dv/dt and avalanche capabilities
•  Low input capacitance and gate charge
•  100% avalanche tested
•  Low gate input resistance
•  Tight process control and high manufacturing yields

Parametrics
Transistor PolarityN-Channel
Drain-Source Breakdown Voltage500 V
Gate-Source Breakdown Voltage+/- 30 V
Continuous Drain Current12 A
Drain-Source On Resistance350 mOhms
ConfigurationSingle
PackagingReel
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