STP5NK100 product image

STP5NK100

MOSFET
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Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Description

 

The  STP5NK100   is SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

 


STP5NK100 Features

 

•  Extremely high dv/dt capability
•  100% avalanche tested
•  Gate charge minimized
•  Very low intrinsic capacitances
•  Very good manufacturing repeatibility

 

STP5NK100 Applications

 

•  Switching application

Parametrics
Transistor PolarityN-Channel
Drain-Source Breakdown Voltage1000 V
Gate-Source Breakdown Voltage+/- 30 V
Continuous Drain Current3.5 A
Resistance Drain-Source RDS (on)3.7 Ohms
ConfigurationSingle
Maximum Operating Temperature+ 150 C
Mounting StyleThrough Hole
Package / CaseTO-220
PackagingTube
STP5NK100 Replacement Parts
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