STP80NF10 Datasheet



This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. STP80NF10 Features • Exceptional dv/dt capability• 100% Avalanche tested• Application oriented characterization STP80NF10 Applications • Switching application


[{"Name":"Drain-Source Breakdown Voltage","Value":"100 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V"},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.015 Ohms "},{"Name":"Maximum Operating Temperature","Value":"+ 175 C"},{"Name":"Package / Case","Value":"Packaging"},{"Name":"Fall Time","Value":"60 ns "},{"Name":"Minimum Operating Temperature","Value":"- 55 C "},{"Name":"Rise Time","Value":"80 ns "},{"Name":"Typical Turn-Off Delay Time","Value":"116 ns "},{"Name":"Continuous Drain Current ","Value":" 80 A "}]

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