The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector.This unit is 8−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. The CA3140A and CA3140 are intended for operation at supply voltages up to 36V (±18V).
Features
- • Input Threshold Current : IF=5mA(MAX)
- • Supply Current(ICC) : 11mA(MAX)
- • Supply Voltage(VCC) : 10~35V
- • Output Current(IO) : ±2.0A(MAX)
- • Switching Time(tpLH/tpHL) : 0.5μs(MAX)
- • Isolation Voltage : 2500Vrms
- • UL Recognized : UL1577,File No.E67349
- • Option(D4)
VDE Approved : DIN VDE0884/06.92 Certificate No.76823
Maximum Operating Insulation Voltage : 630VPK
Highest Permissible Over Voltage : 4000VPK
- • Creepage Distance : 6.4mm(MIN)
Clearance : 6.4mm(MIN)