TLP598GAF product image

TLP598GAF

MOSFET Output Optocouplers
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Manufacturer
Toshiba
Description

 

The  TLP598GAF  consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo − MOS FET in a six lead plastic DIP package (DIP6). The TLP598GAFAis a bi-directional switch which can replace mechanical relays in many applications.
 
 
TLP598GAF  Features
 
• Peak off − state voltage: 400 V (min.) 
• On− state current: 150 mA (max.) (A connection) 
• On− state resistance: 12 Ω  (max.) (A connection) 
• Isolation voltage: 2500 Vrms (min.) (A connection) 
Parametrics
Forward Current7.5 mA
Maximum Operating Temperature+ 85 C
Minimum Operating Temperature- 40 C
Maximum Forward Diode Voltage1.48 V
Maximum Input Diode Current20 mA
Maximum Reverse Diode Voltage5 V
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