The most practical gate drive chip selection guide

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/ 2019-01-29 / News

his article is based on different terminal applications, recommending the most suitable gate driver chip for you. There is also a small test at the end of the article. The 3rd, 13th and 23rd correctly answered readers will have the opportunity to receive the "EVAL-1ED44176N01F Low-Side Gate Driver Evaluation Board".\Household appliances

Infineon's gate driver ICs use industry-leading level-shifting silicon-on-insulator (SOI) and PN junction isolation (JI) technologies to help you meet the most demanding requirements for reliability, safety and efficiency in the home appliance industry. Achieve higher levels of power and efficiencIndustrial Applications

Provide solutions that are high quality, reliable, durable and able to withstand harsh environments. Infineon's gate driver chip is your most professional choice. With Infineon's comprehensive product selection solution, consumers can quickly and efficiently design any system in the industrial field.

Battery-Driven Applications & CAV

Whether it's a charging pile, a low-speed electric car, or a service robot, drone, Infineon offers configurable half-bridge drivers and three-phase driver chips. Together with Infineon's power MOSFETs, it provides users with an efficient solution. In addition, Infineon also offers AEC-Q100 standard automotive grade gate driver chips for all types of electric vehicles.

In battery-driven applications, energy conservation is a very important part. Infineon's gate driver chips help consumers achieve the highest levels of precision and energy efficiency.

New Energy - Solar Inverter

The most important goal of solar photovoltaic power generatSilicon carbide SiC MOSFET drive requirements

Silicon carbide MOSFETs offer excellent fast switching performance, and Infineon offers 1200 volt CoolSiCTM silicon carbide MOSFETs for customers to choose from. Infineon's isolated gate drive, based on coreless transformer technology, is known for its powerful drive and protection features, easily driving 1200 volt silicon carbide MOSFETs and providing reliable electrical isolation. These drivers have many key advantages in driving SiC MOSFETs, extremely short propagation delays, precise channel-to-channel matching and input filtering, ultra-wide output range and negative voltage drive capability, and excellent common-mode transient immunity (CM) TI).

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