The industry generally believes that the future will be able to dig out the greatest value from the data, but to extract the value of the data in addition to the need for strong computing power, the storage of data is also critical. At present, the new memory is also a very important direction for leading companies, Lancaster University (Lancaster) Researchers at the University recently published a paper stating that the new memory they are studying can combine the advantages of stability, high speed, and ultra-low power consumption.
Seeing the current digital technology energy crisis, researchers at Lancaster University have developed a new type of computer that can solve this problem and apply patent.
This new type of memory is expected to replace dynamic random access memory (DRAM) and flash (Flash) drivers. The era of powerful and ultra-low energy computing is coming, are you ready?
The researchers are excited about this development with good reason. The emergence of the Internet of Things in homes and offices has greatly facilitated our smart life, but data-centricity will also consume a lot of energy. Whether it's connected smart devices, speakers or other home devices, you'll need energy to handle all the "data" to provide the best functionality.
In fact, energy consumption is a very concern, and energy efficient lighting and electrical appliances can actually use more computers. And gadgets. According to one study, data torrents are expected to consume one-fifth of global electricity by 2025.
The newly developed electronic storage device can serve everyone's daily life with ultra-low energy consumption. This low power consumption means that the storage device does not need to be started, and it can immediately enter the energy-saving mode even when the button is switched.
As Professor of Physics at Lancaster University, Manus Hayne said, "General-purpose memory stable storage of data, easy to change the stored data is widely considered to be infeasible, even impossible, and new devices prove its contradictory."
"The ideal is to combine the advantages of both without its drawbacks. This is what we have proven. Our device has an inherent data storage time that is expected to exceed the age of the universe, but it can be used DRAM stores 100 times less energy to store or delete data." Manus Hayne said.
To solve and create this new storage device, researchers use quantum mechanics to solve between stable long-term data storage and low-energy write and erase. The dilemma of choice.
Several patented new equipment and research has been expressed by several companies, and new storage devices are expected to replace $100 billion in dynamic random access Take the memory (DRAM) market.
How is this technology implemented? "Room-temperature" published by researchers at Lancaster University Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory The papers of Cells can further understand this technology.
The article states that although different forms of traditional (charge-based) memory are well suited for use in computers and other electronic devices, static random access memory (SRAM), Dynamic Random Access Memory (DRAM) and Flash (Flash) have complementary features that are well suited for use in cache, dynamic memory, and data storage, respectively. However, they all have their own shortcomings. This means that the market needs new memories, and in particular, the contradiction between achieving stability and fast, low voltage (low energy) has proven to be challenging.
The research team reported an oxide-free floating gate memory cell based on a III-V semiconductor heterostructure with a junctionless channel and non-destructive storage of data. Sexual reading. The non-volatile data is retained for at least 100,000 s, and can be combined with a switch of < 2.6 V by using the 2.1 eV conduction band offset of InAs/AlSb and the three-barrier resonant tunneling structure. The combination of low voltage operation and small capacitance means that the inherent switching energy per unit area is 100 and 1000 times smaller than dynamic random access memory and flash memory, respectively. Therefore, the device can be considered as an emerging memory with considerable potential.
In terms of specific structure, this is a new type of low voltage, compound semiconductor The concept of charge-based non-volatile memory devices is designed, modeled, and fabricated for room temperature operation. Using AlSb / InAs' amazing conduction band array performs charge retention and forms a resonant tunnel barrier, enabling the research team to demonstrate low-voltage (low-energy) operation with non-volatile storage. The device is made of InAs / AlSb / An FG memory structure composed of a GaSb heterostructure, in which InAs is used as an FG and a junctionless channel. The research team verified the working principle of the device through simulation, and gave the key storage characteristics of the device, such as the retention characteristics of the program/erase state, and gave the experimental results on a single component.