Homedatasheet113MT140KB

113MT140KB Datasheet

1000V 3 Phase Bridge in a Int-a-pak Package
Share:
Manufacturer

Description

Features, Applications

THREE PHASE CONTROLLED BRIDGE Power Modules
Features

Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case Outstanding number of power encapsulated components Excellent power volume ratio 4000 VRMS isolating voltage UL E78996 approved

Description

A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications.

Voltage Type number Code VRRM, maximum repetitive peak reverse voltage V
VRSM, maximum non-repetitive peak reverse voltage V
VDRM, max. repetitive IRRM/IDRM max. peak off-state voltage gate open circuit V

IO ITSM Maximum DC output current @ Case temperature Maximum peak, one-cycle forward, non-repetitive on state surge current I2t Maximum I2t for fusing

10ms, no voltage reapplied (16.7% x IT(AV) IT(AV)), @ TJ max. x I T(AV)), T J max. (16.7% x IT(AV) IT(AV)), @ TJ max. x I T(AV)), T J max. Ipk = 400�s single junction = 25oC, from 0.67 VDRM , ITM x I T(AV), < 0.5 �s, 25o C, anode supply = 6V, resistive load, gate open circuit = 25oC, anode supply = 6V, resistive load

VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM di/dt IH IL Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Max. non-repetitive rate of rise of turned on current Max. holding current Max. latching current

500 V V/�s 25 oC all terminal shorted = TJ max., linear to 0.67 VDRM, gate open circuit
dv/dt Max. critical rate of rise of off-state voltage
Available with dv/dt 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.

PG(AV) Max. average gate power IGM -VGT VGT Max. peak gate current Max. peak negative gate voltage Max. required DC gate voltage to trigger IGT Max. required DC gate current to trigger VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger

TJ Tstg RthJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque wt to heatsink to terminal g Nm K/W DC operation per module DC operation per junction 120� Rect condunction angle per module 120� Rect condunction angle per junction Per module Mounting surface smooth, flat an greased

A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads.


Features

Parameters

Download DataSheet PDF View and Download


Manufacturer information

Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us

+86-755-83536845

One to One Customer Service

17190417227