Homedatasheet131R

131R Datasheet

Long Wavelength Pin Photo Detector
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Description

Features, Applications

Applications

Telecommunications: Fiber-in-the-loop (FITL) narrowband application SONET/SDH transmission systems Digital cellular Datacom: Local area networks 1 Gbit/s fibre channel Military: Microwave systems Remote antennae Tactical communications

The 131-Type PIN low-profile photodetector offers excellent coupling stability based on Lucent Technologies Microelectronics Group's patented Advanced Lightwave Platform technology.

Features

Analog systems: CATV trunk and loop Micro-/picocellular Microwave Telecommunications: Fiber in the loop (FITL) Broadband Military: Microwave systems Remote antennae Tactical communications

Wavelength: �m--1.6 �m Planar structure for high reliability Low-profile, 8-lead DIP package Wide operating temperature range: +85 �C High optical coupling stability Wide selection of fiber pigtails and connectors available High performance: High responsivity Very low dark current High optical input saturation level High speed for digital applications High linearity and low back reflections for analog applications

Description
LNBW CNSS PIN CURRENT SOURCE RPSS CNPL

The 131-Type photodetectors represent a family of lowprofile, high-reliability pigtailed devices specially engineered for the rigorous demands of either analog applications or digital fiber-optic applications. These photodetectors are based upon Lucent Technologies' patented Advanced Lightwave Platform technology, permitting high optical coupling stability and unparalleled performance. The low-profile package an 8-lead DIP that allows pinout-equivalent replacements for lower-performance coaxial-type packages. The low profile makes it ideal for close board-to-board spacing situations. The 131-Type PIN Photodetectors contain a rearilluminated planar diode structure. Lucent Technologies employs unique diode processing steps to achieve a low capacitance and highly linear active area that ensures a wide dynamic operating range. Responsivity is typically >0.85 A/W with rise and fall times ns at the 1.3 �m wavelength.

Notes: This equivalent circuit is intended as an aid for modeling the device/ package parasitics in order for the circuit designer to better match impedance and optimize bandwidth performance. Minimum parasitic effects can be achieved by connecting the PIN cathode (N-side) to circuit ground, applying a negative voltage to the PIN anode (P-side), and allowing the package voltage to float by not connecting the package ground to circuit ground. Typical values are as follows: CO = Bulk capacitance of the diode to 0.5 pF. RNSS, RPSS = Bulk resistance of the contacts = 5. LSBW = Series inductance of P-side bond wire = 0.25 nH. CNSS, CPSS = Substrate capacitance 0.975 pF/0.28 pF, respectively. LNBW, LPBW = Series inductance of the substrate to package lead bond wire = 2.0 nH. CNPL, CPPL = Package lead capacitance 0.40 pF/0.46 pF, respectively.

Figure 1. Typical Bias Connection This PIN's construction involves a patented silicon optical bench that supplies mechanical stability to the fiber and directive channeling of input light. The structure also allows it to handle strong levels of input power. All fiber types are specially terminated inside the package to minimize back reflections. These PIN photodetectors perform effectively and efficiently over the entire 1.6 �m long wavelength range. They have been employed in a number of diverse applications including digital cellular, remote monitoring, high-speed datacom, fiber-to-thecurb, and CATV signaling.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Parameter Operating Temperature Range Storage Temperature Range Forward Voltage Reverse Voltage* Photocurrent Humidity ESD Threshold

CAUTION: This device is susceptible to damage as a result of electrostatic discharge. Take proper precautions during both handling and testing. Follow guidelines such as JEDEC Publication No. 108-A (Dec. 1988). Although protection circuitry is designed into the device, take proper precautions to avoid exposure to ESD. Lucent Technologies employs a human-body model (HBM) for ESD-susceptibility testing and protection-design evaluation. ESD voltage thresholds are dependent on the critical parameters used to define the model. A standard HBM (resistance 1.5 k, capacitance = 100 pF) is widely used and, therefore, can be used for comparison purposes. The HBM ESD threshold presented here was obtained by using the following circuit parameters: Parameter HBM Threshold Value 250 Unit V


Features

Parameters

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