Homedatasheet13NM60N

13NM60N Datasheet

Transistors
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Description

This device( 13NM60N ) is a N-channel Power MOSFETs made using the second generation of MDmesh™ technology. This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 13NM60N Features • 100% avalanche tested• Low input capacitance and gate charge• Low gate input resistance 13NM60N Applications • Switching applications
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage:","Value":"650 V"},{"Name":"Gate-Source Breakdown Voltage:","Value":"+/- 25 V"},{"Name":"Continuous Drain Current:","Value":"11 A "},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":" Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Power Dissipation:","Value":"109 W"},{"Name":"Rise Time:","Value":"10 ns"},{"Name":"Typical Turn-Off Delay Time:","Value":"9.6 ns"},{"Name":"Fall Time:","Value":"15.4 ns"},{"Name":"","Value":""}]

Manufacturer information

GESS [GE SOLID STATE]
Warm Hint

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