Home datasheet 1F12-T

1F12-T

0.5A,1000V,300ns,R-1,HV Photoflash
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Description

Features, Applications

FEATURES

Fast switching Low leakage Low forward voltage drop High current capability High currenf surge High reliability

Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.19 gram

Ratings 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

MAXIMUM RATINGS (At 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 25 oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO I FSM CJ STG 1260 1800 UNITS Volts Amps pF

ELECTRICAL CHARACTERISTICS (At = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage 0.5A DC Maximum DC Reverse Current at Rated DC Blocking Voltage 25 oC Maximum Full Load Reverse Current Full Cycle Average,.375" (9.5mm) lead length 55 oC Maximum Reverse Recovery Time (Note 1) NOTES : 1. Reverse Recovery Test Conditions: = -1.0A, IRR 0.25A 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts SYMBOL IR 100 trr 300 uAmps nSec 1F16 1F18 UNITS Volts uAmps

FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
Single Phase Half Wave 60Hz Inductive or Resistive Load
FIG. 3 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

1 Rise Time = 7ns max. Input Impedance = NOTES: 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.


Features

Parameters

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Manufacturer information

RECTRON is a leading manufacturer of power semiconductors, offering a comprehensive range of rectifiers including bridge rectifiers, switching diodes, zener diodes, signal transistors and transient voltage suppressors. Product technologies include schottky barrier, ultra fast, super fast, epitaxial, high efficiency, fast recovery, and standard recovery, which is available in a proprietary glass passivated junction construction that significantly increases long term and environmental reliability. All product technologies are produced in a variety of topologies and include axial lead ,SIP, DIP, CASE, surface mount, SOD, SMA, SMB, SMC, DIP, chip & die custom packages.

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