Homedatasheet1N3600UR

1N3600UR Datasheet

Switching Diode
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Features, Applications

1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 SWITCHING DIODE HERMETICALLY SEALED METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION

Junction Temperature: to +175�C Storage Temperature: to +175�C Operating Current: + 25�C Derating: 3.1 mA dc/�C Above TEC + 110�C Forward Surge Current: 4A, (tp 1�s); 0.5A (tp = 1s)

CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80; LL34)

THERMAL RESISTANCE (ROJEC): 100 �C/W maximum = 0 THERMAL IMPEDANCE: (ZOJX): 70 �C/W maximum POLARITY: Cathode end is banded. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/�C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device.

22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com

VF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1.2 1.3
NOTE Percent of Reverse Working Voltage FIGURE 3 Typical Reverse Current vs Reverse Voltage

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