Homedatasheet1N4006G

1N4006G Datasheet

50 V, 1.0 a Silicon Rectifier
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Description

Features, Applications

Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop

* Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram

Rating 25 �C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length 75 �C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage = 1.0 Amp. Maximum DC Reverse Current at rated DC Blocking Voltage 100 �C

Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes :

(1) Measured at 1.0 MHz and applied reverse voltage 4.0VDC (2) Thermal resistance from Junction to Ambient 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT

Features

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