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1N4133

SILICON 500mA LOW NOISE ZENER DIODES
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Description

1N4099-1 THRU 1N4135-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/435
LOW CURRENT OPERATION AT 250 µ A
LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
METALLURGICALLY BONDED

MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage at 200 mA: 1.1 Volts maximum

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Parameters


Manufacturer information

COMPENSATED DEVICES => MICROSEMI
Warm Hint

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