1N4150 Datasheet

Fast Switching Diode


Features, Applications

Silicon Epitaxial Planar Diode Low forward voltage drop High forward current capability
High speed switch and general purpose use in computer and industrial applications

Case: DO-35 Glass Case Weight: approx. 300 mg Packaging Codes/Options: D3/10 K per 13" reel (8 mm tape), 30 K/box D4/3 K per 7" reel (8 mm tape), 30 K/box

Part 1N4150 Type differentiation Single Diodes Ordering code Remarks DO35 Package / 1N4150-TR Ammopack / Tape and Reel

Tamb = 25 �C, unless otherwise specified Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Average peak forward current Forward current Average forward current Power dissipation 0 VR mm, = 4 mm, 1 �s Test condition Sub type Symbol VRRM VR IFSM IFRM IF IFAv PV Value Unit mA mW

Tamb = 25 �C, unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition = 4 mm, TL = constant Symbol RthJA Tj Tstg Value + 175 Unit K/W �C

Tamb = 25 �C, unless otherwise specified Parameter Forward voltage 200 mA Reverse current Diode capacitance Reverse recovery time = 1 MHz, VHF to 100) mA, 0.1 x IR, = 100 Test condition Sub type Symbol IR CD trr Min Typ.

Typical Characteristics (Tamb = 25�C unless otherwise specified)



Download DataSheet PDF View and Download

Manufacturer information

Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us


One to One Customer Service