|Glass Passivated Junction Silicon Zener Diode
Voltage Range to 200 Volts 1.0 Watts Peak Power
Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0 A above 11V High temperature soldering guaranteed: / 10 seconds at terminals Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Case: Molded plastic DO-41 Epoxy: UL 94V-O rate flame retardant Lead: Axial leads, solderable per MIL-STD-202, Method 2025 Polarity: Color Band denotes cathode end Mounting position : Any Weight: 0.012 ounces, 0.3 gram Dimensions in inches and (millimeters)
Rating at 25+ambient temperature unless otherwise specified. Type Number Peak Power Dissipation at TA=50OC, Derate above 50 OC (Note 1)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) (Note 2) Operating and Storage Temperature Range
TJ, TSTG + 150 Notes: 1. Mounted 5.0mm (0.013mm thick) land areas. 2. Measured on 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum.Maximum Zener Impedance (Note 4) Leakage Current
Notes: 1: Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of �5%.
2. Specials Available Include: A. Nominal zener voltages between the voltages shown and tighter voltage tolerances. B. Matched sets.
3. Zener Voltage (VZ) Measurement. Guarantees the zener voltage when messured at 90 seconds while maintaining O the lead temperature (TL) 1 C, from the diode body. 4. Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having and rms value equal 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. 5. Surge Current (Ir) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 10.
TYPICAL LEAKAGE CURRENT 80% OF NOMINAL BREAKDOWN VOLTAGE