Homedatasheet1N4936GP

1N4936GP Datasheet

1 Amp Glass Passivated Fast Recovery Rectifier 50 - 600v
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Description

Features, Applications

1 Amp Glass Passivated Fast Recovery Rectifier - 600 Volts
Features

Glass Passivated Junction Low Leakage Current Metallurgical Bonded Construction Low Cost Fast Switching Operating Temperature: to +175�C Storage Temperature: to +175�C Maximum Thermal Resistance; 30�C/W Junction To Lead Maximum Recurrent Peak Reverse Voltage 400V 600V Maximum DC Blocking Voltage 400V 600V

Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) IFSM =55�C 8.3ms, half sine

*Pulse test: Pulse width 300 �sec, Duty cycle 1%

Figure 1 Typical Forward Characteristics Amps 1.6.4.2 25�C.1.06.04.02.01.4.6.8 Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts Single Phase, Half Wave 60Hz Resistive or Inductive Load �C Average Forward Rectified Current - Amperes versus Ambient Temperature Amps.4.8 1.2 Figure 2 Forward Derating Curve

Junction Capacitance - pF versus Reverse Voltage - Volts

Figure 4 Typical Reverse Characteristics A 2 �Amps Volts Instantaneous Reverse Leakage Current - MicroAmperes versus Percent Of Rated Peak Reverse Voltage - Volts Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 10 trr TA =25�C Amps Cycles Peak Forward Surge Current - Amperes versus Number Of Cycles 60Hz - Cycles Figure 5 Peak Forward Surge Current

0 25Vdc Pulse Generator Note 2 1 Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive Oscilloscope Note 1 -0.25


Features

Parameters

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Manufacturer information

MICROSEMI CORPORATION

Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.

Microsemi is now a subsidiary of Microchip Technology Inc.


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