Homedatasheet1N5258B

1N5258B Datasheet

2.4V; 500mW Epitaxial Zener Diode
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Description

Features, Applications

500mW Power Dissipation High Stability Low Noise Surface Mount Equivalents Available Hemetic Package

Case: DO-35, Glass Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Type Number Weight: 0.13 grams (approx.)

Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Forward Voltage 200mA Pd RqJA VF

= 25�C unless otherwise specified Value to +175 Unit mW �C/W V �C

1. Valid provided that leads are kept � 75�C with lead length 9.5mm (3/8") from case; derate above 75�C.

2. Based on dc measurement at thermal equilibrium; lead length 9.5mm (3/8"); thermal resistance of heat sink = 30�C/W.

TA, AMBIENT TEMPERATURE Fig.1 Power Dissipation vs Ambient Temperature
VZ, ZENER VOLTAGE (V) Fig. 2 Junction Capacitance vs Zener Voltage
VZ, ZENER VOLTAGE (V) Fig. 3 Differential Zener Impedance
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (�C/W)

t1, SQUARE WAVE PULSE DURATION (seconds) Fig. 4 Typical Normalized Transient Thermal Impedance Curves


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