Low profile package Built strain relief Glass passivated junction Low inductance For available tolerances � See Note1
Operating Temperature: C DC Power Dissipation: 5 Watts Power Derating: 40 mW/ C above 75 C Forward Voltage 1.0A: 1.2 Volts
Case: JEDEC DO-201AE , molded plastic over passivated junction. Terminals: Solder plated ,solderable per MIL-STD-750,Method 2026. Standard Packaging 52 mm tape. Weight : 0.04 ounces , 1.1 gram (approx)
ELECTRICAL CHARACTERISTICS A=25 �J unless otherwise noted, VF=1.2 Max @ IF=1A for all types).
Nominal Zener Type No. (Note 1.) Voltage Vz @ IZT volts (Note 1N5387B 1N5388B
NOTE: 1. TOLERANCE AND VOLTAGE DESIGNATION - The JEDEC type numbers shown indicate a tolerance of 10% with guaranteed limits on only Vz, IR, Ir, and VF as shown in the electrical characteristics table. Units with guaranteed limits on all seven parameters are indicated by suffix "B" for 5% tolerance. 2. ZENER VOLTAGE (Vz) AND IMPEDANCE (ZZT & ZZK) - Test conditions for Zener voltage and impedance are as follows; Iz is applied 10 ms prior to reading. Mounting contacts are located from the inside edge of mounting clips to the body of the diode.(TA=25 �J �Т��J
3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on logarithmic paper. Examples of this, using the 6.8v and 200V zeners, are shown in Figure 6. Mounting contact located as specified in Note (TA=25 �J �Т��J 4. VOLTAGE REGULATION (�G Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made at 10% and then 50% of the Iz max value listed in the electrical characteristics table. The test currents are the same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement 40 10 ms. (TA=25 �J �Т��J Mounting contact located as specified Note2. 5. MAXIMUM REGULATOR CURRENT (IZM) - The maximum current shown is based on the maximum voltage a 5% type unit. Therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual Vz of the device. �J at maximum from the device body.
APPLICATION NOTE: Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: = �c LAPD LA is the lead-to-ambient thermal resistance (�J /W) and PD is the power dissipation. Junction Temperature, TJ , may be found from: + �G TJL �G TJL is the increase in junction temperature above the lead temperature and may be found from Figure 3 for a train of power pulses or from Figure 4 for dc power. �G TJL = �c JLPD For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ(�G TJ) may be estimated. Changes in voltage, Vz, can then be found from: TJ �c VZ, the zener voltage temperature coefficient, is fount from Figures 2. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly be the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 3 should not be used to compute surge capability. Surge limitations are given in Figure 5. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure. 5 be exceeded.