Low Current Leakage Metalurgically Bonded Construction Low Forward Voltage High Current Capability Glass Passivated Junction
Operating Temperature: to +175�C Storage Temperature: to +175�C Maximum Thermal Resistance; 30�C/W Junction To Lead Maximum Recurrent Peak Reverse Voltage 800V 1000V Maximum DC Blocking Voltage 800V 1000V
Average Forward IF(AV) = 105�C Current Peak Forward Surge IFSM 200A 8.3ms, half sine Current Maximum 1.1V IFM = 3.0A; Instantaneous VF Forward Voltage = 25�C* Maximum DC Reverse Current = 25�C Rated DC Blocking = 125�C Voltage Typical Junction CJ 40pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse test: Pulse width 300 �sec, Duty cycle 1%
Figure 1 Typical Forward Characteristics Amps 188.8.131.52 25�C.1.06.04.02.01.4.6.8 Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts Single Phase, Half Wave 60Hz Resistive or Inductive Load �C Average Forward Rectified Current - Amperes versus Ambient Temperature 150 175 Amps 2 3.0 Figure 2 Forward Derating CurveJunction Capacitance - pF versus Reverse Voltage - Volts
Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.
Microsemi is now a subsidiary of Microchip Technology Inc.