1N5400GP Datasheet

3 Amp Glass Passivated Rectifier 50 - 1000v


Features, Applications


Low Current Leakage Metalurgically Bonded Construction Low Forward Voltage High Current Capability Glass Passivated Junction

Operating Temperature: to +175�C Storage Temperature: to +175�C Maximum Thermal Resistance; 30�C/W Junction To Lead Maximum Recurrent Peak Reverse Voltage 800V 1000V Maximum DC Blocking Voltage 800V 1000V

Average Forward IF(AV) = 105�C Current Peak Forward Surge IFSM 200A 8.3ms, half sine Current Maximum 1.1V IFM = 3.0A; Instantaneous VF Forward Voltage = 25�C* Maximum DC Reverse Current = 25�C Rated DC Blocking = 125�C Voltage Typical Junction CJ 40pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse test: Pulse width 300 �sec, Duty cycle 1%

Figure 1 Typical Forward Characteristics Amps 25�C. Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts Single Phase, Half Wave 60Hz Resistive or Inductive Load �C Average Forward Rectified Current - Amperes versus Ambient Temperature 150 175 Amps 2 3.0 Figure 2 Forward Derating Curve

Junction Capacitance - pF versus Reverse Voltage - Volts



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Manufacturer information


Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.

Microsemi is now a subsidiary of Microchip Technology Inc.

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