Homedatasheet1N5711

1N5711 Datasheet

Small Signal
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Description

Features, Applications
Features
High Reverse Breakdown Voltage Low Forward Voltage Drop For General Purpose Application
400 mWatt Small Signal Schottky Diode to 70 Volts

Operating Temperature: to +150�C Storage Temperature: to +150�C Maximum Thermal Resistance; 300�C/W Junction To Ambient

Measured VR=0V IF=5mA Reverse Recovery Trr 6V 1.0nS Time RL=100 Note: Valid provided that leads at a distance of 4mm from case are kept ambient temperature. CJ 2pF

Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance

Fig.1 Typical variation of fwd. current vs forward. voltage for primary conduction through the Schottky barrier

Fig.2 Typical forward conduction curve of combination Schottky barrier and PN junction guard ring
VF Fig.3 Typical variation of reverse current at various temperatures
VF Fig.4 Typical capacitance curve as a function of reverse voltage


Features

Parameters

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Manufacturer information

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