Homedatasheet1N6506

1N6506 Datasheet

Diode Array, Package : Dip
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Description

Features, Applications

DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY

Symbol * 3 IFSM PT2 *4 Top Tstg Parameter Reverse Breakdown Voltage Continuous Forward Current Peak Surge Current (tp= 1/120 s) Power Dissipation per Junction @ 25�C Power Dissipation per Package @ 25�C Operating Junction Temperature Range Storage Temperature Range Limit to +200 Unit Vdc mAdc mW �C

NOTE 1: Each Diode NOTE 2: Pulsed: = 100ms max.; duty cycle < 20% NOTE 3: Derate at 2.4mA/�C above +25 �C NOTE 4: Derate at 4.0mW/�C above +25 �C

Electrical Characteristics (Per Diode) @ 25�C unless otherwise specified

Symbol Parameter IR1 Ct tfr trr Forward Voltage Forward Voltage Reverse Current Capacitance (pin to pin) Forward Recovery Time Reverse Recovery Time Conditions

NOTE 1: Pulsed: 300us 50us, duty cycle 2%, 90us after leading edge

Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice.


Features

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Manufacturer information

MICROSEMI CORPORATION

Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.

Microsemi is now a subsidiary of Microchip Technology Inc.


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