Homedatasheet22N50C

22N50C Datasheet

Medium Voltage 600-1199 Volts
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Description

Features, Applications
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight

Test Conditions to 150�C; RGS 1 MW Continuous Transient = 25�C, pulse width limited by TJM IS � IDM, di/dt � 100 A/ms, VDD � VDSS, = 25�C

Features
Maximum lead temperature for soldering mm (0.062 in.) from case for 10 s Symbol Test Conditions

International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier

Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. 9N80 V %/K V %/K mA W
Applications

VGS 3 mA VDSS temperature coefficient VDS = VGS, 2.5 mA VGS(th) temperature coefficient VGS = �20 VDC, VDS = 0 VDS = 0.8 VDSS VGS 0 V

DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls

Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density
IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. 7 2600 VGS 0 V, VDS = 1 MHz 60 35 VGS 10 V, VDS = 0.5 VDSS, 4.7 W (External) VGS 10 V, VDS = 0.5 VDSS, ns nC K/W

gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK

Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM = IS -di/dt = 100 A/ms, 100 V Test Conditions VGS = 0

Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. mC A
Repetitive; pulse width limited by TJM IF = IS, VGS 0 V, Pulse test, � 300 ms, duty cycle = 125�C
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:



Features

Parameters

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