Homedatasheet28LV011

28LV011 Datasheet

EEPROM,3.3V 1 MB (128k X 8)
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Features, Applications

VCC VSS RES CE WE RES I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy

3.3V low voltage operation x 8 Bit EEPROM RAD-PAK� radiation-hardened against natural space radiation Total dose hardness: > 100 krad (Si), depending upon space mission Excellent Single Event Effects: - SELTH MeV/mg/cm2 - SEUTH 37 Mev/mg/cm2 (read mode) - SEU saturated cross section 3E-6 cm2 (read mode) - SEUTH 11.4 Mev/mg/cm2 (write mode) - SEU saturated cross section 5E-3 cm2 (write mode) with hard errors Package: - 32 Pin RAD-PAK� flat pack - 32 Pin RAD-PAK� DIP - JEDEC-approved byte-wide pinout Address Access Time: 250 ns Access times available High endurance: - 10,000 erase/write (in Page Mode), 10-year data retention Page write mode: to 128 bytes Automatic programming 15 ms automatic page/byte write Low power dissipation - 20 mW/MHz active current (typ.) � W standby (maximum)

Maxwell Technologies' 28LV011 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV011 is capable of in-system electrical Byte and Page programmability. It has a 128-Byte Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28LV011, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV011 is designed for high reliability in the most demanding space applications. Maxwell Technologies' patented RAD-PAK� packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK� provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. Note:The recommended form of data protection during power on/off is to hold the RES pin to VSS during power up and power down. This may be accompanied by connecting the RES pin to the CPU reset line. Failure to provide adequate protection during power on/off may result in lost or modified data.

All data sheets are subject to change without notice

PIN SYMBOL DESCRIPTION Address Input/Output Output Enable Chip Enable Write Enable Power Supply Ground Ready/Busy Reset CE WE VCC VSS RDY/BUSY RES

PARAMETER Supply Voltage (Relative to Vss) Input Voltage (Relative to Vss) Operating Temperature Range Storage Temperature Range 1. VIN min -3.0 V for pulse width < 50 ns. SYMBOL VCC VIN TOPR TSTG MIN

PARAMETER Supply Voltage Input Voltage RES_PIN Operating Temperature Range 1. VIL min -1.0 V for pulse width < 50 ns. 2. VIH min 2.2 V for VCC 3.6 V. SYMBOL VCC VIL VIH VH TOPR MIN VCC-0.5 -55

(TA = 1MHZ) PARAMETER Input Capacitance: VIN 0V 1 Output Capacitance: VOUT 0V 1 Guaranteed by design. SYMBOL CIN COUT MIN --MAX 6 12 UNIT

(VCC TO +125�C UNLESS OTHERWISE SPECIFIED) PARAMETER Input Leakage Current Output Leakage Current Standby VCC Current Operating VCC Current TEST CONDITIONS VCC = 3.6V, VIN = 3.6V VCC = 3.6V, VOUT CE = VCC CE = VIH IOUT = 0mA, Duty = 100%, Cycle VCC = 3.3V IOUT = 0mA, Duty = 100%, Cycle ns @ VCC = 3.3V SUBGROUPS SYMBOL ILI ILO ICC2 ICC3 MIN 2, 3 VIL VIH VH VOL VOH VCC-0.5 -VCCx0.8 MAX -V UNIT �A mA


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