2N2222A Datasheet

High Speed Switches


Features, Applications

DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39

Symbol V CBO V CEO V EBO CM P tot Parameter Collector-Base Voltage = 0) Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Collector Peak Current < 5 ms) Total Dissipation at T amb 25 C for 2N2219A for o C for 2N2219A for 2N2222A Storage Temperature

TO-39 R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max 83.3 300

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CBO I CEX I BEX I EBO V (BR)CBO Parameter Collector Cut-off Current = 0) Collector Cut-off Current = -3V) Base Cut-off Current = -3V) Emitter Cut-off Current = 0) Collector-Base Breakdown Voltage = 0) Test Conditions o C Min. Typ. Max. Unit nA V

V (BR)CEO Collector-Emitter Breakdown Voltage 0) V (BR)EBO Emitter-Base Breakdown Voltage = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain

Small Signal Current Gain Transition Frequency Emitter-Base Capacitance Collector-Base Capacitance Real Part of Input Impedance

Symbol NF hie h oe bb' C b'c Parameter Noise Figure Input Impedance Reverse Voltage Ratio Output Admittance Delay Time Rise Time Storage Time Fall Time Feedback Time Constant Test Conditions -0.5 V Min. Typ. Max. Unit ns ps

Pulsed: Pulse duration = 300 �s, duty cycle 1 % See test circuit



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