Homedatasheet2N2907A

2N2907A Datasheet

Small Signal PNP Transistors
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Description

Features, Applications

DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications.

Symbol V CBO V CEO V EBO CM P tot Parameter Collector-Base Voltage = 0) Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Collector Peak Current < 5 ms) Total Dissipation at T amb 25 C for 2N2905A for o C for 2N2905A for 2N2907A Storage Temperature Max. Operating Junction Temperature

TO-39 R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max 83.3 375

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CBO I CEX I BEX V (BR)CBO Parameter Collector Cut-off Current = 0) Collector Cut-off Current = 0.5V) Base Cut-off Current = 0.5V) Collector-Base Breakdown Voltage = 0) Test Conditions o C Min. Typ. Max. Unit nA V

V (BR)CEO Collector-Emitter Breakdown Voltage 0) V (BR)EBO Emitter-Base Breakdown Voltage = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain

Transition Frequency Emitter-Base Capacitance Collector-Base Capacitance Delay Time Rise Time Storage Time Fall Time Turn-on Time Turn-off Time

* Pulsed: Pulse duration = 300 �s, duty cycle 1 % See test circuit
Normalized DC Current Gain. Collector Emitter Saturation Voltage.

Features

Parameters

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Manufacturer information

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