Homedatasheet2N2914

2N2914 Datasheet

Screening Options Available = ;; Polarity = NPN ;; Package = TO77 (MO002AF) ;; Vceo = 45V ;; IC(cont) = 0.03A ;; HFE(min) = 150 ;; HFE(max) = 600 ;; @ Vce/ic = 5V / 0.01mA ;; FT = 60MHz ;; PD = 0.6W
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Description

Features, Applications

Collector � Base Voltage Collector � Emitter Voltage 1 Emitter � Base Voltage Continuous Collector Current Total Device Dissipation Total Device Dissipation

Storage Temperature Range Lead temperature (Soldering, 10 sec.)
ELECTRICAL CHARACTERISTICS (Tamb = 25�C unless otherwise stated)

Parameter Test Conditions = 150�C VCE = 5V VEB = 5V VCE = 5V hFE DC Current Gain VCE = 5V VCE = 5V VBE VCE(sat) hib hob |hfe| Cobo Base � Emitter Voltage Collector � Emitter Saturation Voltage Small Signal Common � Base Input Impedance Small Signal Common � Base Output Admittance Small Signal Common � Base Current Gain Common � Base Open Circuit Output Capacitance * Pulse Test: = 100mA VCB = 1kHz VCB = 1kHz VCE = 20MHz VCB = 1mA VCE 100mA IC Min. 45 6 Typ.

INDIVIDUAL TRANSISTOR CHARACTERISTICS = 10mA V(BR)CBO Collector � Base Breakdown Voltage

V(BR)CEO* V(BR)EBO ICBO ICEO IEBO Collector � Emitter Breakdown Voltage = 10mA Emitter � Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current = 10mA VCB = 45V

2N2916 2N2918 Min. Typ. Max. Min. Typ. Max.
TRANSISTOR MATCHING CHARACTERISTICS hFE1 Static Forward Current VCE = 5V

� VBE2| Gain Balance Ratio Base � Emitter Voltage Differential See Note 2. VCE = 5V VCE = 5V VCE = 25�C VCE = 25�C

� VBE2)DTA| Base � Emitter Voltage Differential Change With Temperature NOTES

1) Terminals not under test are open circuited under all test conditions. 2) The lower of the two readings is taken as hFE1.


Features

Parameters

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Manufacturer information

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