Homedatasheet2N3055

2N3055 Datasheet

Silicon NPN Power Transistors
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Description

DESCRIPTION
·With TO-3 package
·Complement to type MJ2955
·DC Current Gain -hFE = 20–70 @ IC = 4 Adc
·Collector–Emitter Saturation Voltage -VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
·Excellent Safe Operating Area

APPLICATIONS
·Designed for general–purpose switching and amplifier applications.

Features

Parameters

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Manufacturer information

SAVANTIC SEMICONDUCTOR
Warm Hint

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