Homedatasheet2N3501L

2N3501L Datasheet

NPN Transistor, Package : TO-39
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Features, Applications
Qualified per MIL-PRF-19500/366 Devices 2N3501 2N3501L Qualified Level JAN JANTX JANTXV JANS

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

RJC 0 C/W 175 Junction-to-Ambient RJA *Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices 1) Derate linearly 5.71 W/0C for 250C 2) Derate linearly 28.6 W/0C for > 250C Characteristics Thermal Resistance: Junction-to-Case

Collector-Emitter Breakdown Voltage = 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc VCB = 75 Vdc VCB = 100 Vdc VCB = 150 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc VEB = 6.0 Vdc 2N3500, 2N3501 V(BR)CEO Vdc

Forward-Current Transfer Ratio = 0.1 mAdc, VCE = 10 Vdc = 1.0 mAdc, VCE = 10 Vdc = 10 mAdc, VCE = 10 Vdc = 150 mAdc, VCE = 10 Vdc = 300 mAdc, VCE = 10 Vdc = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage = 10 mAdc, = 1.0 mAdc = 300 mAdc, = 30 mAdc = 150 mAdc, = 15 mAdc Base-Emitter Saturation Voltage = 10 mAdc, = 1.0 mAdc = 300 mAdc, = 30 mAdc = 150 mAdc, = 15 mAdc 2N3498 2N3499 All Types 2N3500, 2N3501 All Types 2N3500, 2N3501

Forward Current Transfer Ratio, Magnitude = 20 mAdc, VCE = 20 Vdc, = 100 MHz Output Capacitance VCB = 10 Vdc, 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 0.5 Vdc, 0, 100 kHz f 1.0 MHz

Turn-On Time VEB = 5 Vdc; = 150 mAdc; = 15 mAdc Turn-Off Time = 150 mAdc; = -15 mAdc

DC Tests s; 1 Cycle, 1.0 s Test 1 VCE = 10 Vdc, = 500 mAdc 2N3498, 2N3499 VCE = 16.67 Vdc, = 300 mAdc 2N3500, 2N3501 Test 2 VCE = 50 Vdc, = 100 mAdc All Types Test 3 VCE = 80 Vdc, = 40 mAdc All Types Clamped Switching = +250C Test = 85 mAdc, = 500 mAdc = 50 mAdc, = 300 mAdc 2N3501 (3) Pulse Test: Pulse Width = 300�s, Duty Cycle 2.0%.


Features

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Manufacturer information

MICROSEMI CORPORATION

Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.

Microsemi is now a subsidiary of Microchip Technology Inc.


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