Homedatasheet2N3773

2N3773 Datasheet

Hometaxial-Base, High-Current Silicon N-P-N Transistors
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Description

Rugged High Voltage Devices for Applications in Industrial and Commercial Equipment

These typei are hometaxial-b»se silicon n-p-n transition intended for a wide variety of high-voltage high current applications. Typical applications for these transistors include power-switching circuits, audio amplifiers, series-and shunt-regulator driver and output stages, dc-to-dc converters, inverters, and solenoid (hammeO/relay driver service:
These devices employ the popular JEDEC TO 3 package; they differ in maximum ratings for voltage, current, and power.

Features:
• High dissipation capability -
   120 W I2N4348), 150 W (2N3773), 250 W (2N6269)
• 5 A specification forhFE, VfjE. & VCE<»«> (2N4348)
• 8-A specification for
   hFE, VBE. & VcE(Mt) (2N3773. 2N6259)
• VCEX -
   140 V min I2N4348). 160 V min (2N3773)
   170 V min (2N6259)
• Lowsaturation voltaga with high beta

 

Features

Parameters

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Manufacturer information

NEW JERSEY SEMICONDUCTOR
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