Homedatasheet2N3811LJV

2N3811LJV Datasheet

Package = TO-77 ;; Level = Jans ;; Vceo (V) = 60 ;; Vcbo (V) = 60 ;; Vebo (V) = 5 ;; Ic (A) = 0.05 ;; (Power W) ta = 0.6 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 900 ;; VCE(sat) (V) =
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Description Semicoa Semiconductors offers: Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3811LJ) JANTX level (2N3811LJX) JANTXV level (2N3811LJV) JANS level (2N3811LJS) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Radiation testing (total dose) upon request

Applications
General purpose Matched Dual transistors PNP silicon transistor
Features

Hermetically sealed TO-77 metal can Also available in chip configuration Chip geometry 0220 Reference document: MIL-PRF-19500/336

Please contact Semicoa for special configurations www.SEMICOA.com (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, = 25�C Derate linearly above 25�C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO PT TJ TSTG Qualification Levels: JAN, JANTX, JANTXV and JANS Radiation testing available

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page of 1

Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE6 hFE3-1/hFE3-2 Base-Emitter Voltage VBE VCEsat1 VCEsat2 Test Conditions = 1 �A, VCE = 5 Volts = 10 �A, VCE = 5 Volts = 100 �A, VCE = 5 Volts = 1 mA, VCE = 5 Volts = 10 mA, VCE = 5 Volts = 100 �A, VCE = 5 Volts = 100 �A, VCE = 5 Volts VCE = 5 Volts, 100 �A VCE = 5 Volts, 10 �A VCE = 5 Volts, 100 �A VCE = 5 Volts, = 100 �A, = 1 mA, = 100 �A, = 1 mA, 100 �A Symbol V(BR)CEO IEBO1 IEBO2 Test Conditions 100 �A VCB = 60 Volts VCB = 50 Volts VCB = 50 Volts, = 150�C VEB = 5 Volts VEB = 4 Volts Min Typ Max Units Volts �A nA

Pulse Test: Pulse Width = 300 �s, Duty Cycle 2.0%
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page of 2

Data Sheet Dynamic Characteristics Parameter Magnitude � Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Symbol |hFE1| |hFE2| hFE COBO CIBO Test Conditions VCE = 5 Volts, = 500 �A, = 30 MHz VCE = 5 Volts, = 1 mA, = 100 MHz VCE = 10 Volts, = 1 mA, = 1 kHz VCB = 5 Volts, = 0 mA, 100 kHZ MHz VEB = 0.5 Volts, = 0 mA, 100 kHZ MHz VCE = 10 Volts, = 100 �A, = 1 kHz = 10 kHz VCE = 10 Volts, = 100 �A, < 15.7 kHz VCB f =1kHz VCB f =1kHz VCB IC=100�A, f=1kHz Min pF Typ Max Units

Noise Figure (wideband) Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit reverse Voltage Transfer Ratio

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page of 3

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