Homedatasheet2N3866

2N3866 Datasheet

Microwave
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Description

Features, Applications

Features

Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain dB - Efficiency 45% 800 MHz Current-Gain Bandwidth Product

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.

Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit Vdc mA

D Total Device Dissipation Derate above 5.0 28.6 Watts mW/ �C

Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IE = 0.1 mAdc) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, = 0) Collector Cutoff Current (VCE = 28 Vdc, = 0) Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.5 Vdc) Value Typ. Max. 20 100 Unit Vdc �A

HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A Collector-Emitter Saturation Voltage (IC = 100 mAdc, = 20 mAdc)

Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, = 200 MHz) Output Capacitance (VCB = 30 Vdc, = 1.0 MHz) 500 800 Value Typ. 800 2.8 Max. 3.5 Unit MHz

Symbol GPE Power Gain Test Conditions Min. Test Circuit-Figure 1 Pin 0.1 W, VCE = 400 MHz, 25 C Test Circuit-Figure 1 Pin 0.1 W, VCE = 400 MHz, 25 C Test Circuit-Figure 1 Pin 0.1 W, VCE = 400 MHz, C 10 Value Typ. Max. Unit dB

Figure - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS.
L1: 2 TURNS No. 18 wire, ID, 1/8" long Capacitor values in pF unless otherwise indicated.
Ls: 2 � TURNS No. 18 wire, ID, 3/16" long Tuning capacitors are air variable

Features

Parameters

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