Homedatasheet2N4339

2N4339 Datasheet

Low Noise/low Voltage
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Description

Features, Applications

FEATURES
Low Cutoff Voltage: <1 V High Input Impedance Very Low Noise High Gain: AV mA

D Full Performance from Low-Voltage Power Supply: Down V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification

APPLICATIONS

D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers

DESCRIPTION

The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet.

Gate-Source/Gate-Drain Voltage. �50 V Forward Gate Current. 50 mA Storage Temperature. to 200_C Operating Junction Temperature. to 175_C Lead Temperature (1/16" from case for 10 sec.). 300_C Power Dissipationa. 300 mW Notes a. Derate 2 mW/_C above 25_C

Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb

V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F)
Drain Cutoff Current Gate-Source Forward Voltagec

Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec Noise Figure gfs VDS 15 V, VGS = 1 kHz gos rds(on) Ciss VDS 15 V, VGS = 1 MHz Crss en NF VDS 10 V, VGS = 1 kHz VDS 15 V, VGS kHz, 1 MW nV/ Hz dB VDS 0 V, VGS = 1 kHz W mS

Drain Cutoff Current Gate-Source Forward Voltage

Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec Noise Figure

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v3%. c. This parameter not registered with JEDEC.

Drain Current and Transconductance vs. Gate-Source Cutoff Voltage

10 IDSS @ VDS 10 V, VGS 0 V gfs @ VDS 10 V, VGS kHz 5 gfs � Forward Transconductance (mS) IG � Gate Leakage (A) 500 mA


Features

Parameters

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Manufacturer information

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