Homedatasheet2N5199

2N5199 Datasheet

Monolithic General Purpose
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Description

Features, Applications

FEATURES

Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise High CMRR: 100 dB

D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal

APPLICATIONS

D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters

DESCRIPTION

The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG 20 V. The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet).

For similar products see the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets.

Gate-Drain, Gate-Source Voltage. �50 V Gate Current. 50 mA Lead Temperature (1/16" from case for 10 sec.). 300 _C Storage Temperature. to 200_C Operating Junction Temperature. to 150_C Document Number: D, 04-Jun-01 Power Dissipation : Per Sidea. 250 mW Totalb. 500 mW

Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C www.vishay.com

Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current

Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos gfs gos Ciss Crss NF 2.5 VDS 20 V, VGS kHz VDS 20 V, VGS MHz 20 0.5 nV/ dB mS

Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature GS1�V GS2| D|V G1�I G2| CMRR VDG = 125_C VDG 200 mA VDG 200 mA VDG to 125_C VDS 20 V, VGS V mV mV/_C

Differential Gate Current Common Mode Rejection Ratioc

Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs VDS 20 V, VGS = 1 kHz gos gfs gos Ciss Crss en NF VDS 20 V, VGS = 1 MHz pF nV/ dB mS

Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature GS1�V GS2| D|V G1�I G2| CMRR VDG = 125_C VDG 200 mA VDG 200 mA VDG to 125_C VDS 20 V, VGS V mV mV/_C

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: v300 ms duty cycle v3%. c. This parameter not registered with JEDEC.


Features

Parameters

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Manufacturer information

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