Homedatasheet2N5551

2N5551 Datasheet

Small Signal High VoltageTransistor (NPN)
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Description

The 2N5551 is designed for general purpose high voltage amplifiers and gas discharge display drivers. 2N5551 Features • Switching and amplification in high voltage• Low current(max. 600mA)• High voltage(max.180v) 2N5551 Applications • Telephone switching circuit• Amplifier
Features

Parameters

[{"Name":"Maximum Collector-Base Voltage VCBO","Value":"180 V"},{"Name":"Maximum Collector-Emitter Voltage VCEO","Value":"160 V"},{"Name":"Maximum Emitter-Base Voltage VEBO","Value":"6 V"},{"Name":"Maximum Collector Current IC","Value":"600 mA"},{"Name":"Maximum Base Current IB","Value":"100 mA"},{"Name":"Maximum Total Power Dissipation PD ","Value":"625 mW"},{"Name":"Maximum Junction Temperature TJ ","Value":"+150 °C"},{"Name":"Maximum Storage Temperature TSTG ","Value":"-55 to +150 °C"},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

TEL [TRANSYS ELECTRONICS LIMITED]
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