|Dual N-Channel JFET High Frequency Amplifier
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage. -25V Gate Current. 50mA Storage Temperature Range. to +200oC Operating Temperature Range. to +150oC Lead Temperature (Soldering, 10sec). +300oC Power Dissipation Derate above 25oCTight Tracking Low Insertion Loss Good Matching
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SYMBOL IGSS BVGSS VGS(off) VGS IG IDSS gfs gos goss Ciss Crss en NF Gate Reverse Current Gate Reverse Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Gate Operating Current Saturation Drain Current (Pulsewidth 300�s, duty cycle 3%) Common-Source Forward Transconductance Common-Source Forward Transconductance (Note 1) Common-Source Output Conductance Common-Source Output Conductance (Note 1) Common-Source Input Capacitance (Note 1) Common-Source Reverse Transfer Capacitance (Note 1) Equivalent Short Circuit Input Noise Voltage (Note 1) Spot Noise Figure (Note = 100k VDG nA mA VDS = 10V, VGS oC V PARAMETER MIN MAX -100 -250 UNITS = -1 �A, VDS = 0 VDS = 1nA VDG = 5mA TEST CONDITIONS VGS = -15V, VDS 150 oCELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
SYMBOL | T PARAMETER Differential Gate Current Saturation Drain Current Ratio Differential Gate-Source Voltage Gate-Source Voltage Differential Drift (Measured at end points, TA and TB) 2N5911 2N5912 UNITS nA TEST CONDITIONS VDG = 125oC