Homedatasheet2N6034

2N6034 Datasheet

Power 4A 80V PNPD , Package: TO-225, Pins=3
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Description

Features, Applications

Plastic Darlington Complementary Silicon Power Transistors
. designed for general�purpose amplifier and low�speed switching applications.
High DC Current Gain Collector�Emitter Sustaining Voltage @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) = 80 Vdc (Min) 2N6036, 2N6039 Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc Monolithic Construction with Built�In Base�Emitter Resistors to LimitELeakage Multiplication Space�Saving High Performance�to�Cost Ratio TO�225AA Plastic Package

DARLINGTON 4�AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS 40 WATTS

Symbol VCEO VCB VEB 2N6039 80 Unit Vdc Adc Collector�Emitter Voltage Collector�Base Voltage Emitter�Base Voltage 4.0 8.0 Collector Current Continuous Peak Base Current 100 mAdc Watts W/_C Watts _C Total Power Dissipation = 25_C Derate above 25_C Total Power Dissipation = 25_C Derate above 25_C Operating and Storage Junction Temperature Range TJ, Tstg to +150

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector�Emitter Sustaining Voltage (IC = 100 mAdc, = 0) Collector�Cutoff Current (VCE = 60 Vdc, = 0) (VCE = 80 Vdc, = 0) VCEO(sus) Vdc 60 80 ICEO 2N6039 100 Collector�Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, = 125_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, = 125_C) Collector�Cutoff Current (VCB = 60 Vdc, = 0) (VCB = 80 Vdc, = 0) ICEX 2N6036, 2N6039 ICBO mAdc 0.5 2.0 Emitter�Cutoff Current (VBE = 5.0 Vdc, = 0) IEBO mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE Collector�Emitter Saturation Voltage (IC = 2.0 Adc, = 8.0 mAdc) (IC = 4.0 Adc, = 40 mAdc) VCE(sat) Vdc Base�Emitter Saturation Voltage (IC = 4.0 Adc, = 40 mAdc) Base�Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) VBE(sat) VBE(on) Vdc DYNAMIC CHARACTERISTICS Small�Signal Current�Gain (IC = 0.75 Adc, VCE = 10 Vdc, = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, = 0.1 MHz) |hfe| Cob 200 100 *Indicates JEDEC Registered Data.

& RC VARIED TO OBTAIN DESIRED CURRENT LEVELS V D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE mA RC SCOPE MSD6100 USED BELOW 100 mA TUT 25 �s

for td and tr, D1 is disconnected and 0, RB and RC are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses.

Figure 2. Switching Times Test Circuit http://onsemi.com

Features

Parameters

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Manufacturer information

ON SEMICONDUCTOR

ON Semiconductor - ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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