2N6036 Datasheet

Package Type : TO-126 Plastic-encapsulate Bipolar Transistor, PC : 40W, Vceo : 80V, ic : 4.0A


Features, Applications
This device is designed for general purpose amplifier and low-speed switching applications.

Symbol V CEO V CBO V EBO IB TJ TSTG Symbol RJ C RJA Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Peak Base Current Operating Junction Temperature Storage Temperature Rating Total Device Dissipation Derate above 25OC Total Device Dissipation Derate above 25OC Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Rating to +150 Max Unit mA Unit W W/OC W W/OC O C/W O C/W

Collector-Emitter Breakdown Voltage IE =0) ICEO Collector Cutoff Current IE =0) ICEX Collector Cutoff Current EB(off)=1.5Vdc, TC=125 OC) ICBO Collector-Cutoff Current IE =0) IEBO Emitter Cutoff Current (VEB =5.0Vdc, IC=0) *Indicates JEDEC Registered Data VCEO(sus) Vdc uAdc uA mA mAdc

hFE DC Current Gain CE=3.0Vdc, IC=4.0Adc) Collector-Emitter Saturation Voltage IB =8.0mA dc) IB =40mAdc) Base-Emitter Saturation Voltage IB =40mAdc) Base-Emitter On Voltage (IC=2.0Adc, VCE=3.0Vdc) Small-Signal Current-Gain f=1.0MHz ) Output Capacitance =0, f=0.1MHz)



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