. designed for general-purpose amplifier and low-speed switching applications. High DC Current Gain - hFE = 2500 (Typ) = 4.0 Adc Collector-Emitter Sustaining Voltage @ 100 mAdc - VCEO(sus) = 60 Vdc (Min) = 100 Vdc (Min) 2N6042, 2N6045 Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) = 4.0 Adc = 2.0 Vdc (Max) = 3.0 Adc 2N6042, 2N6045 Monolithic Construction with Built-In Base-Emitter Shunt Resistors EPOXY MEETS @ 0.125 in ESD Ratings: Human Body Model, 8000 V Machine Model, 400 V
Symbol VCEO VCB VEB 2N6045 100 Unit Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current- Base Current 8.0 16 Continuous Peak 120 mAdc W W/�C �C Total Power Dissipation = 25�C Derate above 75 0.60 Operating and Storage Junction, Temperature Range TJ, Tstg + 150
TO-220AB CASE 221A-09 Style 1 xxxx = Specific Device Code: A = Assembly Location Y = Year WW = Work Week
Device 2N6043 2N6045 Package TO-220AB Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail*Preferred devices are recommended choices for future use and best overall value.
Figure 1. Power Derating *ELECTRICAL CHARACTERISTICS (TC = 25�C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (IC = 100 mAdc, = 0) VCEO(sus) Vdc 60 100Collector Cutoff Current (VCE = 60 Vdc, = 0) (VCE = 100 Vdc, = 0)
Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, = 150�C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, = 150�C) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, = 150�C) Collector Cutoff Current (VCB = 60 Vdc, = 0)
DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 4.0 Adc, = 16 mAdc) (IC = 3.0 Adc, = 12 mAdc) (IC = 8.0 Adc, = 80 Adc)
Base-Emitter Saturation Voltage (IC = 8.0 Adc, = 80 mAdc) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, = 0.1 MHz)Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, = 1.0 kHz)
& RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE mA MSD6100 USED BELOW 100 mAr(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.5 0.2 P(pk) qJC(t) = r(t) qJC 1.67�C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME t1 t2 TJ(pk) TC = P(pk) qJC(t) DUTY CYCLE, = t1/t2
20 10 IC, COLLECTOR CURRENT (AMP) = 150�C BONDING WIRE LIMITED THERMALLY LIMITED = 25�C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6043 2N6045 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150�C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
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