Homedatasheet2N6338G

2N6338G Datasheet

High-Power NPN Silicon Transistors
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Description

• High Collector−Emitter Sustaining Voltage − VCEO(sus)= 100 Vdc (Min) −2N6338 = 150 Vdc (Min) −2N6341• High DC Current Gain − hFE= 30 −120 @ IC= 10 Adc = 12 (Min) @ IC= 25 Adc• Low Collector−Emitter Saturation Voltage − VCE(sat)= 1.0 Vdc (Max) @ IC= 10 Adc• Fast Switching Times @ IC= 10 Adc tr= 0.3 ms (Max) ts= 1.0 ms (Max) tf= 0.25 ms (Max)• Pb−Free Packages are Available
Features

Parameters

[{"Name":"Current - Collector (Ic) (Max) ","Value":"25A"},{"Name":"Voltage - Collector Emitter Breakdown (Max) ","Value":"100V"},{"Name":"Vce Saturation (Max) @ Ib, Ic ","Value":"1.8V @ 2.5A, 25A"},{"Name":"Current - Collector Cutoff (Max) ","Value":"50μA"},{"Name":"DC Current Gain (hFE) (Min) @ Ic, Vce ","Value":"30 @ 10A, 2V"},{"Name":"Power - Max ","Value":"200W"},{"Name":"Frequency - Transition ","Value":"40MHz"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

FAIRCHILD SEMICONDUCTOR
Warm Hint

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