| Features, Applications |
hFE = 5.0 Adc = 5.0 (Min) = 15 Adc Collector�Emitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) = 80 Vdc (Min) 2N6488, 2N6491 High Current Gain Bandwidth Product = 5.0 MHz (Min) = 1.0 Adc TO�220AB Compact Package Rating Symbol VCEO VCB VEB 80 90 Unit Vdc Adc Collector�Emitter Voltage Collector�Base Voltage Emitter�Base Voltage Base Current 15 5.0 Collector Current Continuous Total Power Dissipation = 25_C Derate above 25_C Total Power Dissipation = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 75 0.6 Watts W/_C Watts W/_C 1.8 0.014 TJ, Tstg to +150 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60�80 VOLTS 75 WATTSPreferred devices are ON Semiconductor recommended choices for future use and best overall value. Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector�Emitter Sustaining Voltage (1) (IC = 200 mAdc, = 0) Collector�Emitter Sustaining Voltage (1) (IC = 200 mAdc, VBE = 1.5 Vdc) Collector Cutoff Current (VCE = 30 Vdc, = 0) (VCE = 40 Vdc, = 0) VCEO(sus) Vdc 2N6488, 2N6491 VCEX Vdc 2N6488, 2N6491 ICEO mAdc 2N6491 1.0 Collector Cutoff Current (VCE = 65 Vdc, VEB(off) = 1.5 Vdc) (VCE = 85 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, = 150_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, = 150_C) Emitter Cutoff Current (VBE = 5.0 Vdc, = 0) ICEX �Adc 2N6488, 2N6491 IEBO mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) hFE Collector�Emitter Saturation Voltage (IC = 5.0 Adc, = 0.5 Adc) (IC = 15 Adc, = 5.0 Adc) Base�Emitter On Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) VCE(sat) Vdc VBE(on) Vdc DYNAMIC CHARACTERISTICS Current�Gain Bandwidth Product (2) (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 5.0 25 MHz Small�Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, = 1.0 kHz) *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 �s, Duty Cycle fT = |hfe| ftest. hfe |
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