Homedatasheet2N6509TG

2N6509TG Datasheet

Thyristors
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Description

The 2N6509TG is Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. 2N6509TG Features • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability• Blocking Voltage to 800 Volts• 300 A Surge Current Capability• Pb-Free Packages are Available*
Features

Parameters

[{"Name":"Breakover Current IBO Max","Value":"250 A "},{"Name":"Rated Repetitive Off-State Voltage VDRM","Value":"800 V "},{"Name":"Off-State Leakage Current @ VDRM IDRM","Value":"0.01 mA "},{"Name":"Forward Voltage Drop","Value":"1.8 V "},{"Name":"Gate Trigger Voltage (Vgt)","Value":"1.5 V "},{"Name":"Gate Trigger Current (Igt)","Value":"30 mA"},{"Name":"Holding Current (Ih Max)","Value":"40 mA"},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

SHANGHAI SUNRISE ELECTRONICS
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