Homedatasheet2N6794L

2N6794L Datasheet

500V VDSS N-channel Fet (field Effect Transistor)
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Description

Features, Applications

FEATURES
DYNAMIC dv/dt RATING SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25�C unless otherwise stated)

VGS ID IDM PD EAS dv/dt TJ , Tstg RJC RJA Gate � Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current

Power Dissipation @ Tcase = 25�C Linear Derating Factor Single Pulse Avalanche Energy 2 Peak Diode Recovery

Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction-to-Ambient

Notes 1) Pulse Test: Pulse Width 2) @ VDD 25 , Peak 1.5A , Starting 3) @ ISD 1.5A , di/dt 50A/�s , VDD BVDSS 150�C , SUGGESTED = 7.5

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.

ELECTRICAL CHARACTERISTICS (Tamb = 25�C unless otherwise stated)

STATIC ELECTRICAL RATINGS BVDSS Drain � Source Breakdown Voltage BVDSS Temperature Coefficient of TJ RDS(on) Breakdown Voltage Static Drain � Source On�State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate � Source Leakage Reverse Gate � Source Leakage DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Notes Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate � Source Charge Gate � Drain ("Miller") Charge Turn�On Delay Time Rise Time Turn�Off Delay Time Fall Time Continuous Source Current Pulse Source Current

VGS(th) Gate Threshold Voltage gfs IDSS IGSS
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn�On Time

PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) 1) Pulse Test: Pulse Width 2% 2) Repetitive Rating � Pulse width limited by maximum junction temperature.


Features

Parameters

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Manufacturer information

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