Homedatasheet2N6849L

2N6849L Datasheet

100V VDSS P-channel Fet (field Effect Transistor)
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Description

Features, Applications

P�CHANNEL POWER MOSFETs VDSS ID(cont) RDS(on)
FEATURES
Single pulse avalanche energy rated TO�39 METAL PACKAGE (TO-205AF)

SOA is power dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance

ABSOLUTE MAXIMUM RATINGS (Tcase = 25�C unless otherwise stated)

VGS VDS VDG ID IDM EAS TJ , TSTG RJC RJA Gate � Source Voltage* Drain � Source Voltage* Drain � Gate Voltage (RGS = 20k)* Continuous Drain Current @ TCase 25�C* @ TCase = 100�C* Pulsed Drain Current2* Single Pulse Avalanche Current3 Power Dissipation @ TCase = 25�C* Linear Derating Factor* Operating and Storage Junction Temperature Range* Thermal Resistance Junction to Case* Thermal Resistance Junction to Ambient 5�C/W 175�C/W

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.

ELECTRICAL CHARACTERISTICS (Tcase = 25�C unless otherwise stated)

STATIC ELECTRICAL RATINGS BVDSS Drain � Source Breakdown Voltage* Static Drain � Source On�State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage* IGSS IDSS Forward Gate � Source Leakage Reverse Gate � Source Leakage Zero Gate Voltage Drain Current*

VDS(on) On-State Drain Voltage1 gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton Forward Transconductance 1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate � Source Charge Gate � Drain ("Miller") Charge Turn�On Delay Time Rise Time Turn�Off Delay Time Fall Time

SOURCE � DRAIN DIODE CHARACTERISTICS Continous Source Current* Pulse Source Current |(Body Diode Forward Voltage 1 Reverse Recovery Time Reverse Recovery Charge Forward Turn�On Time Diode)2

Modified MOSFETSymbol showing the integralreverse P-N Junction rectifier.

*JEDEC Registered Value 1 Pulse Test: Pulse Width 300�s, duty cycle 2% 2 Repetitive Rating: Pulse width limited by max. junction temperature 3 VDD = 25V starting = 25, Peak = 6.5A


Features

Parameters

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Manufacturer information

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