Homedatasheet2N7002K

2N7002K Datasheet

Transistors
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Description

The description of 2N7002K is MOSFET 60V, 115mA N-Chan 2N7002K Features • Low On-Resistance• Low Gate Threshold Voltage• Low Input Capacitance• Fast Switching Speed• Low Input/Output Leakage• Ultra-Small Surface Mount Package• Pb Free/RoHS Compliant• ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage","Value":"60 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V"},{"Name":"Continuous Drain Current","Value":"0.115 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"2000 mOhms"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature","Value":"- 55 C"},{"Name":"Power Dissipation","Value":"350 mW"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

TOSHIBA SEMICONDUCTOR
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