Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 MW) Drain Current - Continuous = 25�C (Note 1) - Continuous = 100�C (Note 1) - Pulsed (Note 2) Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) Symbol VDSS VDGR ID IDM Value Unit Vdc mAdc N-Channel 3
Characteristic Total Device Dissipation FR-5 Board (Note = 25�C Derate above 25�C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note = 25�C Derate above 25�C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max RqJA TJ, Tstg to +150 �C/W �C Unit mW mW/�C �C/W mW mW/�C
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle x 0.062 in. 4. Alumina in 99.5% alumina.
Device 2N7002LT3G SOT-23 (Pb-free) Package SOT-23 Shipping 3000 Tape & Reel 10,000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.Preferred devices are recommended choices for future use and best overall value.
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 10 mAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate-Body Leakage Current, Forward (VGS = 20 Vdc) Gate-Body Leakage Current, Reverse (VGS - 20 Vdc) ON CHARACTERISTICS (Note 5) Gate Threshold Voltage (VDS = VGS, = 250 mAdc) On-State Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) Static Drain-Source On-State Voltage (VGS = 10 Vdc, = 500 mAdc) (VGS = 5.0 Vdc, = 50 mAdc) Static Drain-Source On-State Resistance (VGS = 500 mAdc) (VGS = 5.0 Vdc, = 50 mAdc) Forward Transconductance (VDS 2.0 VDS(on), = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Turn-Off Delay Time BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage (IS = 11.5 mAdc, VGS 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. VSD IS ISM Vdc mAdc (VDD = 25 Vdc, ^ 500 mAdc, 50 W, Vgen 10 V) td(on) td(off) ns Ciss Coss Crss = 125�C VGS(th) ID(on) VDS(on) - rDS(on) gFS mmhos Ohms Vdc mA Vdc = 125�C V(BR)DSS IDSS IGSSF IGSSR Vdc mAdc nAdc Symbol Min Typ Max UnitFigure 3. Temperature versus Static Drain-Source On-Resistance
Figure 4. Temperature versus Gate Threshold Voltage
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