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2N7002LT1G Datasheet

Small Signal MOSFET 115 mAmps, 60 Volts / N–Channel SOT–23


Features, Applications

Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 MW) Drain Current - Continuous = 25�C (Note 1) - Continuous = 100�C (Note 1) - Pulsed (Note 2) Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) Symbol VDSS VDGR ID IDM Value Unit Vdc mAdc N-Channel 3

Characteristic Total Device Dissipation FR-5 Board (Note = 25�C Derate above 25�C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note = 25�C Derate above 25�C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max RqJA TJ, Tstg to +150 �C/W �C Unit mW mW/�C �C/W mW mW/�C

1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle x 0.062 in. 4. Alumina in 99.5% alumina.

Device 2N7002LT3G SOT-23 (Pb-free) Package SOT-23 Shipping 3000 Tape & Reel 10,000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 10 mAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate-Body Leakage Current, Forward (VGS = 20 Vdc) Gate-Body Leakage Current, Reverse (VGS - 20 Vdc) ON CHARACTERISTICS (Note 5) Gate Threshold Voltage (VDS = VGS, = 250 mAdc) On-State Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) Static Drain-Source On-State Voltage (VGS = 10 Vdc, = 500 mAdc) (VGS = 5.0 Vdc, = 50 mAdc) Static Drain-Source On-State Resistance (VGS = 500 mAdc) (VGS = 5.0 Vdc, = 50 mAdc) Forward Transconductance (VDS 2.0 VDS(on), = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Turn-Off Delay Time BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage (IS = 11.5 mAdc, VGS 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. VSD IS ISM Vdc mAdc (VDD = 25 Vdc, ^ 500 mAdc, 50 W, Vgen 10 V) td(on) td(off) ns Ciss Coss Crss = 125�C VGS(th) ID(on) VDS(on) - rDS(on) gFS mmhos Ohms Vdc mA Vdc = 125�C V(BR)DSS IDSS IGSSF IGSSR Vdc mAdc nAdc Symbol Min Typ Max Unit

Figure 3. Temperature versus Static Drain-Source On-Resistance
Figure 4. Temperature versus Gate Threshold Voltage



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Manufacturer information


ON Semiconductor - ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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