FEATURES High collector current (max. 100 mA) Low collector-emitter saturation voltage (max. 500 mV). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor SC-70 (SOT323) plastic package. NPN complement: 2PD601AW PINNING PIN 2 3 base emitter collectorDESCRIPTION
MARKING TYPE NUMBER 2PB709ARW 2PB709ASW Note = p: made in Hong Kong. = t: made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. For mounting conditions, see "Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18". PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 �C; note 1 CONDITIONS open emitter open base open collector MIN. MAX. mW �C UNIT MARKING N9* Fig.1 Simplified outline SC-70 (SOT323) and symbol.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 625
1. For mounting conditions, see "Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18". CHARACTERISTICS Tamb 25 �C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain 2PB709ARW 2PB709ASW VCEsat Cc fT collector-emitter saturation voltage collector capacitance transition frequency 2PB709ARW 2PB709ASW Note 1. Pulse test: tp 300 �s; = -100 mA; = -10 mA; note = 0; VCB = 1 MHz = -1 mA; VCE = 100 MHz CONDITIONS = 0; VCB = 0; VCB = 0; VEB = -2 mA; VCE pF - MIN. MAX. -5 -10 UNIT �A nA