Homedatasheet2SA1193K

2SA1193K Datasheet

Silicon PNP Epitaxial, Darlington
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Description

Features, Applications

Application

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings to +150 Unit �C

Item Symbol Min �60 2000 Typ 0.3 0.9 Max �0.5 mA Unit V �A Test conditions = �1 mA, RBE = VCB = 0 VEB = 0 VCE = �250 mA, �0.5 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) on t off

Maximum Collector Dissipation Curve 0.9 Collector power dissipation PC (W) Collector current IC (A) iC (peak) IC max Area of Safe Operation

Typical Output Characteristics �500 Collector current IC (mA)

DC Current Transfer Ratio vs. Collector Current 100,000 DC Current transfer ratio hFE VCE �3 V Pulse �100 �300 Collector Current IC (mA) 25 �C


Features

Parameters

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Manufacturer information

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